RF power transistor package
Product description
RF power transistor package
High performance、low cost.
The package usually adopts metal ring frame high temperature brazing ceramic radio frequency feed component, metal heat dissipation plate structure. The shape, structure and size and number of RF feed pins can be customized. The supporting cover plate adopts the step cover structure to meet the parallel seam welding process. The illustrated sample shows the standard packaging structure of 2pin RF power transistor, and the sealing surface size is 16 ㎜ X16 ㎜, which can replace the inlet power tube seal equally.

Example of RF Transmission Port VSWR

The package RF feed pass adopts HTCC ceramic process, which can meet the C band requirements and the highest X band index.
The heat dissipation bottom plate of the package adopts CPC, CMC, tungsten, copper, molybdenum, copper and other high heat dissipation materials, with the highest thermal conductivity of 260W/m.K. If the Cu-Dia material is used, its thermal conductivity is up to 580W/m.K.
The coating of the package, planar and other parameters can be customized according to the characteristics of the actual micro-assembly process, which can meet the requirements of the automatic micro-assembly process.

Design drawings